IRF6643TR1PBF

Mfr. #:: IRF6643TR1PBF
メーカー:: Infineon Technologies
説明:: IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg
ライフサイクル:: メーカー新製品
データシート:: IRF6643TR1PBF データシート
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HTML Datasheet:: IRF6643TR1PBF Datasheet IRF6643TR1PBF Datasheet (P4-P6)IRF6643TR1PBF Datasheet (P7-P9)
ECAD Model:

製品属性
属性値

メーカー: インターナショナルレクティファイアー

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

取り付けスタイル: SMD / SMT

パッケージ-ケース: DirectFET-7

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 89 W

最高作動温度: + 150 C

立ち下がり時間: 4.4 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 6.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 150 V

Vgs-th-Gate-Source-Threshold-Voltage: 4.9 V

Rds-On-Drain-Source-Resistance: 29 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 39 nC

フォワード-相互コンダクタンス-最小: 16 S

Tags: IRF6643, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6643TR1PBF 説明

***ical: Trans MOSFET N-CH 150V 6.2A 7-Pin Direct-FET MZ T/R

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):34.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:50mJ; Base Number:6643; Cont Current Id @ 70°C:5A; Current Id Max:6.2A; Fall Time tf:4.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MZ; Power Dissipation Pd:2.8mW; Pulse Current Idm:76A; Rise Time:5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

モデル	メーカー	説明	ストック	価格
IRF6643TR1PBF DISTI # IRF6643TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6643TR1PBF DISTI # IRF6643TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6643TR1PBF DISTI # IRF6643TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 6.2A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6643TR1PBF DISTI # 70018845	Infineon Technologies AG	600V FAST 1-8 KHZ COPACK IGBT IN A TO-220AB PACKAGE RoHS: Compliant	0	1000:$2.3400 2000:$2.1400
IRF6643TR1PBF DISTI # 942-IRF6643TR1PBF	Infineon Technologies AG	MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS: Compliant	0
IRF6643TR1PBF	International Rectifier		922
IRF6643TR1PBF	International Rectifier	6.2A, 150V, 0.0345OHM, N-CHANNEL, SI, POWER, MOSFET	9	9:$2.2500 3:$3.0000 1:$4.5000
IRF6643TR1PBF	International Rectifier	RoHS: Compliant	Europe - 4000
IRF6643TR1PBF DISTI # 1385503	Infineon Technologies AG	MOSFET, N, DIRECTFET RoHS: Compliant	0	1:$6.0300 10:$3.4600 100:$3.2700 250:$3.0600 500:$2.9300 1000:$2.8900

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