OMO ElectronicOMO Electronic
Expand menu
こんにちは、サインインマイアカウント
0 ショッピングカート

SIHB12N50E-GE3

SIHB12N50E-GE3
Mfr. #:
SIHB12N50E-GE3
メーカー:
Vishay
説明:
IGBT Transistors MOSFET N-Channel 500V
ライフサイクル:
メーカー新製品
データシート:
SIHB12N50E-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SIHB12N50E-GE3 詳しくは
製品属性
属性値
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***et
N-CHANNEL 500V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
モデル メーカー 説明 ストック 価格
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 10.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		12In Stock
  • 1000:$1.2282
  • 500:$1.4823
  • 100:$1.9058
  • 10:$2.3720
  • 1:$2.6300
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1199
  • 2000:$1.0869
  • 4000:$1.0429
  • 6000:$1.0139
  • 10000:$0.9869
SIHB12N50E-GE3
DISTI # 43Y2393		Vishay IntertechnologiesMOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes747
  • 1:$2.4000
  • 10:$1.9900
  • 25:$1.8400
  • 50:$1.6900
  • 100:$1.5400
  • 250:$1.4500
  • 500:$1.3500
SIHB12N50E-GE3
DISTI # 78-SIHB12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		997
  • 1:$2.4000
  • 10:$1.9900
  • 100:$1.5400
  • 500:$1.3500
  • 1000:$1.2900
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 5:£1.6100
  • 25:£1.5000
  • 100:£1.1700
  • 250:£1.1000
  • 500:£1.0200
SIHB12N50E-GE3
DISTI # 2471937RL		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		0
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    画像 モデル 説明
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3

    		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3

    		 MOSFET N-Channel 500V
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3

    		 MOSFET N-Channel 600V
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    		 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB12N65E

    Mfr.#: SIHB12N65E

    OMO.#: OMO-SIHB12N65E-1190

    		 ブランドニューオリジナル
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    可用性
    ストック:
    Available
    注文中:
    3500
    数量を入力してください:
    SIHB12N50E-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $1.48
    $1.48
    10
    $1.41
    $14.06
    100
    $1.33
    $133.23
    500
    $1.26
    $629.15
    1000
    $1.18
    $1 184.30
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
    Top