SIHB12N60ET5-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

380 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

29 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

147 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

4.83 mm

Length:

10.67 mm

Series:

E

Width:

9.65 mm

Brand:

Vishay / Siliconix

Fall Time:

19 ns

Product Type:

MOSFET

Rise Time:

19 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns

Typical Turn-On Delay Time:

14 ns

Unit Weight:

0.077603 oz

Tags

SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH