TSM5055DCR RLG

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

38 A, 107 A

Rds On - Drain-Source Resistance:

8.8 mOhms, 2.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

9.3 nC, 49 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

30 W, 69 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

Asymmetric Dual N-Channel Power MOSFET

Brand:

Taiwan Semiconductor

Forward Transconductance - Min:

27 S, 47 S

Fall Time:

14 ns, 49 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

65 ns, 79 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

8.2 ns, 34 ns

Typical Turn-On Delay Time:

4.8 ns, 11 ns

Tags

TSM50, TSM5, TSM