F4150R12KS4BOSA1

F4150R12KS4BOSA1
Mfr. #:
F4150R12KS4BOSA1
メーカー:
Infineon Technologies
説明:
IGBT MODULE VCES 1200V 150A
ライフサイクル:
メーカー新製品
データシート:
F4150R12KS4BOSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
F4150, F415, F41
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 180A 960000mW 26-Pin ECONO3-4 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 180A; Transistor Polarity:n Channel; Dc Collector Current:180A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:960W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:- Rohs Compliant: Yes
***ineon
EconoPACK 3 1200V fourpack IGBT module with the fast IGBT2 for high-frequency switching and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; welding; induction; aircon
モデル メーカー 説明 ストック 価格
F4150R12KS4BOSA1
DISTI # V99:2348_17562475
Infineon Technologies AGTrans IGBT Module N-CH 1200V 180A 960000mW 26-Pin Tray
RoHS: Compliant
0
  • 10:$193.6400
F4150R12KS4BOSA1
DISTI # F4150R12KS4BOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 150A
RoHS: Not compliant
Min Qty: 10
Container: Bulk
Temporarily Out of Stock
  • 10:$210.3000
F4150R12KS4BOSA1
DISTI # F4150R12KS4BOSA1
Infineon Technologies AGLOW POWER ECONO - Trays (Alt: F4150R12KS4BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
    F4150R12KS4BOSA1
    DISTI # 13AC8779
    Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 180A,Transistor Polarity:N Channel,DC Collector Current:180A,Collector Emitter Saturation Voltage Vce(on):3.2V,Power Dissipation Pd:960W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:- RoHS Compliant: Yes0
    • 1:$216.6500
    F4-150R12KS4
    DISTI # 641-F4-150R12KS4
    Infineon Technologies AGIGBT Modules N-CH 1.2KV 180A
    RoHS: Compliant
    0
    • 1:$224.2000
    • 5:$218.8000
    • 10:$213.3700
    • 25:$210.3800
    F4150R12KS4BOSA1
    DISTI # 2726110
    Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 180A
    RoHS: Compliant
    0
    • 5:$332.6700
    • 2:$344.5500
    • 1:$357.3200
    F4150R12KS4BOSA1
    DISTI # 2726110
    Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 180A0
    • 5:£168.0000
    • 1:£171.0000
    画像 モデル 説明
    F4150R12KS4BOSA1

    Mfr.#: F4150R12KS4BOSA1

    OMO.#: OMO-F4150R12KS4BOSA1-INFINEON-TECHNOLOGIES

    IGBT MODULE VCES 1200V 150A
    可用性
    ストック:
    Available
    注文中:
    3500
    数量を入力してください:
    F4150R12KS4BOSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $294.58
    $294.58
    10
    $279.86
    $2 798.56
    100
    $265.13
    $26 512.65
    500
    $250.40
    $125 198.65
    1000
    $235.67
    $235 668.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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