NE5511279A-T1-A

Product Attribute

Attribute Value

Manufacturer:

CEL

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Id - Continuous Drain Current:

3 A

Vds - Drain-Source Breakdown Voltage:

20 V

Gain:

15 dB

Output Power:

40 dBm

Maximum Operating Temperature:

+ 125 C

Mounting Style:

SMD/SMT

Package / Case:

79A-4

Packaging:

Reel

Configuration:

Single

Operating Frequency:

900 MHz

Type:

RF Power MOSFET

Brand:

CEL

Forward Transconductance - Min:

0.0023 S

Pd - Power Dissipation:

20 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

6 V

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Tags

NE5511, NE551, NE55, NE5