 |  | | |
| PartNumber | NE5511279A-T1-A | NE5511279A-A | NE5511279A-T1 |
| Description | RF MOSFET Transistors UHF Band RF Power | RF MOSFET Transistors UHF Band RF Powe | |
| Manufacturer | CEL | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Gain | 15 dB | - | - |
| Output Power | 40 dBm | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | 79A-4 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 900 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | CEL | - | - |
| Forward Transconductance Min | 0.0023 S | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 6 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
CEL |
NE5511279A-T1-A | RF MOSFET Transistors UHF Band RF Power | |
| NE5511279A-T1-A | FET RF 20V 900MHZ 79A-PKG | ||
| NE5511279A-A | RF MOSFET Transistors UHF Band RF Powe | ||
| NE5511279A-T1 | New and Original |