BSC750N10NDGATMA1

BSC750N10NDGATMA1
Mfr. #:
BSC750N10NDGATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
ライフサイクル:
メーカー新製品
データシート:
BSC750N10NDGATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TDSON-8
チャネル数:
2 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
13 A
Rds On-ドレイン-ソース抵抗:
62 mOhms, 62 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
11 nC, 11 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
26 W
構成:
デュアル
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 2
トランジスタタイプ:
2 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
6.5 S, 6.5 S
立ち下がり時間:
3 ns, 3 ns
製品タイプ:
MOSFET
立ち上がり時間:
4 ns, 4 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
13 ns, 13 ns
典型的なターンオン遅延時間:
9 ns, 9 ns
パーツ番号エイリアス:
BSC750N10ND BSC75N1NDGXT G SP000359610
単位重量:
0.019612 oz
Tags
BSC750N10NDG, BSC750N10ND, BSC75, BSC7, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 100 V 75 mOhm 8 nC OptiMOS™ Power Mosfet - TDSON-8
***et
Transistor MOSFET Array Dual N-CH 100V 13A 8-Pin TDSON T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 13A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):62mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Power Dissipation Pd:26W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
モデル メーカー 説明 ストック 価格
BSC750N10NDGATMA1
DISTI # V72:2272_06384594
Infineon Technologies AGTrans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4985
  • 1:$1.1814
BSC750N10NDGATMA1
DISTI # BSC750N10NDGATMA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 100V 3.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
932In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
BSC750N10NDGATMA1
DISTI # BSC750N10NDGATMA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 100V 3.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
932In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
BSC750N10NDGATMA1
DISTI # BSC750N10NDGATMA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 100V 3.2A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6291
BSC750N10NDGATMA1
DISTI # 26195511
Infineon Technologies AGTrans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4985
  • 3000:$0.5804
  • 1000:$0.5862
  • 500:$0.7221
  • 250:$0.8063
  • 100:$0.8151
  • 25:$1.0181
  • 11:$1.0302
BSC750N10NDGATMA1
DISTI # BSC750N10NDGATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC750N10NDGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6159
  • 10000:$0.6139
  • 20000:$0.6129
  • 30000:$0.6109
  • 50000:$0.6099
BSC750N10NDGATMA1
DISTI # 60R2523
Infineon Technologies AGMOSFET, N CHANNEL, 100V, 13A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    BSC750N10ND G
    DISTI # 726-BSC750N10NDG
    Infineon Technologies AGMOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
    RoHS: Compliant
    6057
    • 1:$1.4200
    • 10:$1.2100
    • 100:$0.9250
    • 500:$0.8180
    • 1000:$0.6450
    • 5000:$0.5720
    BSC750N10NDGATMA1
    DISTI # 726-BSC750N10NDGATMA
    Infineon Technologies AGMOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
    RoHS: Compliant
    4522
    • 1:$1.4200
    • 10:$1.2100
    • 100:$0.9250
    • 500:$0.8180
    • 1000:$0.6450
    BSC750N10NDGATMA1Infineon Technologies AGPower Field-Effect Transistor, 3.2A I(D), 100V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    4012
    • 1000:$0.5000
    • 500:$0.5300
    • 100:$0.5500
    • 25:$0.5700
    • 1:$0.6200
    BSC750N10NDGATMA1
    DISTI # 7545327P
    Infineon Technologies AGMOSFET DUAL N-CH 100V 3.2A OPTIMOS2 SON8, RL974
    • 10:£0.4250
    BSC750N10NDGATMA1
    DISTI # C1S322000278062
    Infineon Technologies AGTrans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R
    RoHS: Compliant
    4985
    • 5000:$0.5409
    BSC750N10NDGATMA1
    DISTI # C1S322000649367
    Infineon Technologies AGMOSFETs
    RoHS: Compliant
    4985
    • 250:$0.8063
    • 100:$0.8151
    • 25:$1.0181
    • 10:$1.0302
    BSC750N10NDGATMA1
    DISTI # 1775481
    Infineon Technologies AGMOSFET, N CH, 13A, 100V, PG-TDSON-8
    RoHS: Compliant
    0
    • 1:$2.2500
    • 10:$1.9200
    • 100:$1.4600
    • 500:$1.3000
    • 1000:$1.0300
    • 5000:$0.9060
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    可用性
    ストック:
    Available
    注文中:
    1986
    数量を入力してください:
    BSC750N10NDGATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $1.41
    $1.41
    10
    $1.20
    $12.00
    100
    $0.92
    $92.50
    500
    $0.82
    $409.00
    1000
    $0.64
    $645.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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