D3S190N65E-T

Product Attribute

Attribute Value

Manufacturer:

D3 Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Rds On - Drain-Source Resistance:

190 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

28 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

D3

Fall Time:

21 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

57 ns

Typical Turn-On Delay Time:

9 ns

Tags

D3S19, D3S1, D3S