RFD7N10LE

RFD7N10LE
Mfr. #:
RFD7N10LE
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Lifecycle:
New from this manufacturer.
Datasheet:
RFD7N10LE Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
RFD7N10LE, RFD7N, RFD7, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
RFD7N10LEHarris SemiconductorPower Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Not Compliant
5942
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
RFD7N10LEIntersil Corporation*** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, TO-251AA6110
  • 1160:$0.7875
  • 641:$0.8625
  • 1:$2.2500
RFD7N10LEHarris Semiconductor*** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, TO-251AA46
  • 41:$1.6500
  • 12:$1.8750
  • 1:$3.0000
RFD7N10LEIntersil Corporation 500
    RFD7N10LEHarris Semiconductor 58
      RFD7N10LESMHarris Semiconductor 19
        RFD7N10LESMHarris Semiconductor 1155
          RFD7N10LESMIntersil Corporation 2889
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            RFD7N10LE

            Mfr.#: RFD7N10LE

            OMO.#: OMO-RFD7N10LE-1190

            Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
            RFD7N10LEEM

            Mfr.#: RFD7N10LEEM

            OMO.#: OMO-RFD7N10LEEM-1190

            New and Original
            RFD7N10LESM

            Mfr.#: RFD7N10LESM

            OMO.#: OMO-RFD7N10LESM-1190

            New and Original
            Availability
            Stock:
            Available
            On Order:
            4500
            Enter Quantity:
            Current price of RFD7N10LE is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $0.68
            $0.68
            10
            $0.64
            $6.41
            100
            $0.61
            $60.75
            500
            $0.57
            $286.90
            1000
            $0.54
            $540.00
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