IPG20N06S4L26AATMA1

Mfr. #:: IPG20N06S4L26AATMA1
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
ライフサイクル:: メーカー新製品
データシート:: IPG20N06S4L26AATMA1 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: Automotive, AEC-Q101, OptiMOS

包装: テープ＆リール（TR）

パーツエイリアス: IPG20N06S4L-26A SP001023848

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-PowerVDFN

テクノロジー: Si

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PG-TDSON-8-10

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 33W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

入力-静電容量-Ciss-Vds: 1430pF @ 25V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 20A

Rds-On-Max-Id-Vgs: 26 mOhm @ 17A, 10V

Vgs-th-Max-Id: 2.2V @ 10μA

ゲートチャージ-Qg-Vgs: 20nC @ 10V

Pd-電力損失: 51 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 20 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 55 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 50 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 15 ns

典型的なターンオン遅延時間: 2 ns

Qg-Gate-Charge: 13 nC

チャネルモード: 強化

Tags: IPG20N06S4L26A, IPG20N06S4L2, IPG20N06S4L, IPG20N06S4, IPG20N06, IPG20N0, IPG20, IPG2, IPG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPG20N06S4L26AATMA1 説明

***ineon SCT: 60V, Dual N-Ch, 26 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS

***et Europe: Transistor MOSFET Array Dual N-CH 60V 20A 8-Pin TDSON T/R

***ical: Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R

***ark: Mosfet, Aec-Q101, Dual N-Ch, 60V, 20A; Transistor Polarity:dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.021Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Powerrohs Compliant: Yes

***ineon: Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting

Market price

モデル	メーカー	説明	ストック	価格
IPG20N06S4L26AATMA1 DISTI # V72:2272_06384699	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4796	3000:$0.3882 1000:$0.4125 500:$0.4915 250:$0.5461 100:$0.6067 25:$0.7305 10:$0.8927 1:$1.0347
IPG20N06S4L26AATMA1 DISTI # V36:1790_06384699	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	0
IPG20N06S4L26AATMA1 DISTI # IPG20N06S4L26AATMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	14938In Stock	1000:$0.4961 500:$0.6284 100:$0.7607 10:$0.9760 1:$1.0900
IPG20N06S4L26AATMA1 DISTI # IPG20N06S4L26AATMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	14938In Stock	1000:$0.4961 500:$0.6284 100:$0.7607 10:$0.9760 1:$1.0900
IPG20N06S4L26AATMA1 DISTI # IPG20N06S4L26AATMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	10000:$0.4110 5000:$0.4270
IPG20N06S4L26AATMA1 DISTI # 32435638	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4796	3000:$0.3787 1000:$0.4125 500:$0.4915 250:$0.5461 100:$0.6067 25:$0.7305 18:$0.8116
IPG20N06S4L26AATMA1 DISTI # IPG20N06S4L26AATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S4L26AATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3699 30000:$0.3769 20000:$0.3899 10000:$0.4049 5000:$0.4199
IPG20N06S4L26AATMA1 DISTI # SP001023848	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TDSON T/R (Alt: SP001023848) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.3379 30000:€0.3639 20000:€0.3939 10000:€0.4299 5000:€0.5259
IPG20N06S4L26AATMA1 DISTI # 43AC3274	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 60V, 20A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,PowerRoHS Compliant: Yes	7474	1000:$0.4420 500:$0.5610 250:$0.5970 100:$0.6340 50:$0.6980 25:$0.7620 10:$0.8260 1:$0.9600
IPG20N06S4L-26A DISTI # 726-IPG20N06S4L-26A	Infineon Technologies AG	MOSFET N-Ch 55V 20A TDSON-8 RoHS: Compliant	8885	1:$0.9500 10:$0.8180 100:$0.6280 500:$0.5550 1000:$0.4380 5000:$0.3890 10000:$0.3740
IPG20N06S4L26AATMA1 DISTI # 726-IPG20N06S4L26AAT	Infineon Technologies AG	MOSFET N-Ch 55V 20A TDSON-8 RoHS: Compliant	4130	1:$0.9500 10:$0.8180 100:$0.6280 500:$0.5550 1000:$0.4380 5000:$0.3890 10000:$0.3740
IPG20N06S4L26AATMA1 DISTI # 2803398	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 60V, 20A RoHS: Compliant	7474	5000:$0.5750 1000:$0.6060 500:$0.6410 250:$0.7400 100:$0.8770 25:$1.0800 5:$1.2400
IPG20N06S4L26AATMA1 DISTI # 2803398	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, 60V, 20A	7589	500:£0.4320 250:£0.4610 100:£0.4890 25:£0.6360 5:£0.7120

画像	モデル	説明
	Mfr.#: IPG20N06S415AATMA1 OMO.#: OMO-IPG20N06S415AATMA1	MOSFET N-CHANNEL_55/60V
	Mfr.#: IPG20N06S4L26ATMA1 OMO.#: OMO-IPG20N06S4L26ATMA1	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
	Mfr.#: IPG20N06S4L11ATMA1 OMO.#: OMO-IPG20N06S4L11ATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 8TDSON
	Mfr.#: IPG20N06S4L11AATMA1 OMO.#: OMO-IPG20N06S4L11AATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 8TDSON
	Mfr.#: IPG20N06S2L-50 OMO.#: OMO-IPG20N06S2L-50-1190	MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
	Mfr.#: IPG20N06S2L-65 OMO.#: OMO-IPG20N06S2L-65-1190	MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
	Mfr.#: IPG20N06S2L35ATMA1 OMO.#: OMO-IPG20N06S2L35ATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 55V 20A TDSON-8-4
	Mfr.#: IPG20N06S4L-11A OMO.#: OMO-IPG20N06S4L-11A-1190	ブランドニューオリジナル
	Mfr.#: IPG20N06S4L-26A OMO.#: OMO-IPG20N06S4L-26A-1190	MOSFET N-Ch 55V 20A TDSON-8
	Mfr.#: IPG20N06S4L14ATMA1 OMO.#: OMO-IPG20N06S4L14ATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 8TDSON

IPG20N06S4L26AATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes