RCD051N20TL

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

5 A

Rds On - Drain-Source Resistance:

540 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.25 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

8.3 nC

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

29 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

RCD051N20

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

1.3 S

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

RCD051N20

Unit Weight:

0.011993 oz

Tags

RCD05, RCD0, RCD