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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| HGT1S12N60B3DS | Harris Semiconductor | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | 1100 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: HGT1S12N60A4S9A OMO.#: OMO-HGT1S12N60A4S9A |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S12N60A4D OMO.#: OMO-HGT1S12N60A4D-1190 |
ブランドニューオリジナル |
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Mfr.#: HGT1S12N60A4DS9A OMO.#: OMO-HGT1S12N60A4DS9A-1190 |
ブランドニューオリジナル |
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Mfr.#: HGT1S12N60B3D OMO.#: OMO-HGT1S12N60B3D-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S12N60B3DS OMO.#: OMO-HGT1S12N60B3DS-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S12N60B3G OMO.#: OMO-HGT1S12N60B3G-1190 |
ブランドニューオリジナル |
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Mfr.#: HGT1S12N60B3S OMO.#: OMO-HGT1S12N60B3S-1190 |
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S12N60C3DS OMO.#: OMO-HGT1S12N60C3DS-37 |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) |
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Mfr.#: HGT1S12N60C3S OMO.#: OMO-HGT1S12N60C3S-1190 |
ブランドニューオリジナル |
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Mfr.#: HGT1S12N60C3S9AR4501 |
ブランドニューオリジナル |
