IPB120N06S4H1ATMA2

Mfr. #:: IPB120N06S4H1ATMA2
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
ライフサイクル:: メーカー新製品
データシート:: IPB120N06S4H1ATMA2 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: IPB120N06

包装: リール

パーツエイリアス: IPB120N06S4-H1 IPB120N06S4H1XT SP001028782

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-263-3

テクノロジー: Si

チャネル数: 1 Channel

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 250 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 15 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 120 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 2.4 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 60 ns

典型的なターンオン遅延時間: 30 ns

Qg-Gate-Charge: 270 nC

チャネルモード: 強化

Tags: IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB120N06S4H1ATMA2 説明

***ical: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 175DEG C, 250W;

***ure Electronics: Single N-Channel 60 V 2.1 mOhm 270 nC OptiMOS Power Mosfet - TO-263-3

***et: Transistor MOSFET N-CH 60V 120A 3-Pin TO-263 T/R

***ark: MOSFET, N-CH, 60V, 175DEG C, 250W ROHS COMPLIANT: YES

***nell: MOSFET, CAN-N, 60V, 175°C, 250W;

***i-Key: MOSFET N-CH 60V 120A TO263-3

***ronik: N-CH 60V 120A 2,1mOhm TO263

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

モデル	メーカー	説明	ストック	価格
IPB120N06S4H1ATMA2 DISTI # IPB120N06S4H1ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.5807
IPB120N06S4H1ATMA2 DISTI # IPB120N06S4H1ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.3900 2000:$1.3900 4000:$1.2900 6000:$1.2900 10000:$1.2900
IPB120N06S4H1ATMA2 DISTI # SP001028782	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028782) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5900 2000:€1.2900 4000:€1.1900 6000:€1.0900 10000:€1.0900
IPB120N06S4H1ATMA2 DISTI # 726-IPB120N06S4H1ATM	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant	2017	1:$2.7200 10:$2.3100 100:$2.0100 250:$1.9000 500:$1.7100 1000:$1.4400
IPB120N06S4-H1 DISTI # 726-IP726-B120N06S4H	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 RoHS: Compliant	0

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