IPW50R299CP

IPW50R299CP
Mfr. #:
IPW50R299CP
Manufacturer:
Rochester Electronics, LLC
Description:
IGBT Transistors MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
Lifecycle:
New from this manufacturer.
Datasheet:
IPW50R299CP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Product Category
FETs - Single
Series
CoolMOS CP
Packaging
Tube
Part-Aliases
IPW50R299CPFKSA1 IPW50R299CPXK SP000301163
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Tradename
CoolMOS
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
104 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
12 ns
Rise-Time
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Resistance
299 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
80 ns
Typical-Turn-On-Delay-Time
35 ns
Channel-Mode
Enhancement
Tags
IPW50R29, IPW50R2, IPW50, IPW5, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Part # Mfg. Description Stock Price
IPW50R299CPFKSA1
DISTI # IPW50R299CPFKSA1-ND
Infineon Technologies AGMOSFET N-CH 550V 12A TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW50R299CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant
    9838
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant
    140
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CP
    DISTI # 726-IPW50R299CP
    Infineon Technologies AGMOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
    RoHS: Compliant
    210
    • 1:$2.7600
    • 10:$2.3500
    • 100:$2.0400
    IPW50R299CPFKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      Image Part # Description
      IPW50R299CPFKSA1

      Mfr.#: IPW50R299CPFKSA1

      OMO.#: OMO-IPW50R299CPFKSA1

      MOSFET LOW POWER_LEGACY
      IPW50R140CPFKSA1

      Mfr.#: IPW50R140CPFKSA1

      OMO.#: OMO-IPW50R140CPFKSA1

      MOSFET HIGH POWER_LEGACY
      IPW50R190CEFKSA1 , 2SJ23

      Mfr.#: IPW50R190CEFKSA1 , 2SJ23

      OMO.#: OMO-IPW50R190CEFKSA1-2SJ23-1190

      New and Original
      IPW50R250CPFKSA1

      Mfr.#: IPW50R250CPFKSA1

      OMO.#: OMO-IPW50R250CPFKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 500V 13A TO-247
      IPW50R399CP,5R399P

      Mfr.#: IPW50R399CP,5R399P

      OMO.#: OMO-IPW50R399CP-5R399P-1190

      New and Original
      IPW50R399CPS

      Mfr.#: IPW50R399CPS

      OMO.#: OMO-IPW50R399CPS-1190

      New and Original
      IPW50R199CP

      Mfr.#: IPW50R199CP

      OMO.#: OMO-IPW50R199CP-124

      Darlington Transistors MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP
      IPW50R250CP

      Mfr.#: IPW50R250CP

      OMO.#: OMO-IPW50R250CP-124

      Darlington Transistors MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP
      IPW50R190CEFKSA1

      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1-INFINEON-TECHNOLOGIES

      Darlington Transistors MOSFET N-Ch 550V 63A TO247-3
      IPW50R350CP

      Mfr.#: IPW50R350CP

      OMO.#: OMO-IPW50R350CP-126

      IGBT Transistors MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP
      Availability
      Stock:
      Available
      On Order:
      4500
      Enter Quantity:
      Current price of IPW50R299CP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.12
      $2.12
      10
      $2.01
      $20.09
      100
      $1.90
      $190.35
      500
      $1.80
      $898.90
      1000
      $1.69
      $1 692.00
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