IPD70N12S311ATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

120 V

Id - Continuous Drain Current:

70 A

Rds On - Drain-Source Resistance:

9.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

65 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Series:

N Channel

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Fall Time:

8 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25 ns

Typical Turn-On Delay Time:

17 ns

Part # Aliases:

IPD70N12S3-11 SP001400108

Unit Weight:

0.011993 oz

Tags

IPD70N12, IPD70N1, IPD70N, IPD70, IPD7, IPD