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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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モデル | メーカー | 説明 | ストック | 価格 |
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BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 19997In Stock |
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BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 19997In Stock |
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BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
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BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSC016N06NSATMA1 DISTI # BSC016N06NS | Infineon Technologies AG | Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
BSC016N06NSATMA1 DISTI # 79X1327 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 0 |
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BSC016N06NSATMA1. DISTI # 27AC1071 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
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BSC016N06NS DISTI # 726-BSC016N06NS | Infineon Technologies AG | MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant | 143 |
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BSC016N06NSATMA1 DISTI # 726-BSC016N06NSATMA1 | Infineon Technologies AG | MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant | 0 |
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BSC016N06NSATMA1 DISTI # 2432702 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
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BSC016N06NSATMA1 DISTI # 2432702 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC016N06NSATMA1 DISTI # 2432702RL | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
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画像 | モデル | 説明 |
---|---|---|
Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1 |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS | |
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC016N04LSGATMA1 OMO.#: OMO-BSC016N04LSGATMA1 |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC016N03LSGXT/BKN OMO.#: OMO-BSC016N03LSGXT-BKN-1190 |
INSTOCK | |
Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC016N03MS OMO.#: OMO-BSC016N03MS-1190 |
Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | |
Mfr.#: BSC016N03MSG OMO.#: OMO-BSC016N03MSG-1190 |
Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC016N03MSGXT OMO.#: OMO-BSC016N03MSGXT-1190 |
ブランドニューオリジナル | |
Mfr.#: BSC016N06NSATMA1 |
MOSFET N-CH 60V 30A TDSON-8 | |
Mfr.#: BSC016N06NSTATMA1 |
DIFFERENTIATED MOSFETS |