TSM70N10CH X0G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251S-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

70 A

Rds On - Drain-Source Resistance:

10 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

145 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

120 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

N-Channel Power MOSFET

Brand:

Taiwan Semiconductor

Fall Time:

42 ns

Product Type:

MOSFET

Rise Time:

13 ns

Factory Pack Quantity:

1875

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

27 ns

Tags

TSM70N10CH, TSM70N10C, TSM70N10, TSM70N1, TSM70, TSM7, TSM