TSM1N45CW RPG

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

450 V

Id - Continuous Drain Current:

500 mA

Rds On - Drain-Source Resistance:

3.7 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

15 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

23.7 ns

Product Type:

MOSFET

Rise Time:

32.8 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25.2 ns

Typical Turn-On Delay Time:

14.7 ns

Unit Weight:

0.009171 oz

Tags

TSM1N45CWR, TSM1N45CW, TSM1N45C, TSM1N4, TSM1N, TSM1, TSM