SI3459BDV-T1-GE3

SI3459BDV-T1-GE3
Mfr. #:
SI3459BDV-T1-GE3
メーカー:
Vishay
説明:
MOSFET P-CH 60V 2.9A 6-TSOP
ライフサイクル:
メーカー新製品
データシート:
SI3459BDV-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI3459BDV-T1-GE3 詳しくは
製品属性
属性値
Tags
SI3459BDV-T, SI3459BDV, SI3459B, SI3459, SI345, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 0.180ohms; Id -2.2A; TSOP-6; Pd 2W
***ure Electronics
P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R
***ark
P-Channel 60-V (D-S) Mosfet Rohs Compliant: No
***i-Key
MOSFET P-CH 60V 2.9A 6-TSOP
***Components
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V
***
P-CHANNEL 60-V (D-S) MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -60V, -2.9A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:3.3W; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, CANALE P, -60V, -2,9A, TSOP; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.9A; Tensione Drain Source Vds:-60V; Resistenza di Attivazione Rds(on):0.18ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:3.3W; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI3459BDV-T1-GE3
DISTI # V72:2272_07432605
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
55
  • 25:$0.5427
  • 10:$0.6633
  • 1:$0.7621
SI3459BDV-T1-GE3
DISTI # V36:1790_07432605
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000:$0.2863
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
33000In Stock
  • 30000:$0.2290
  • 15000:$0.2351
  • 6000:$0.2441
  • 3000:$0.2622
SI3459BDV-T1-GE3
DISTI # 33591883
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1688
SI3459BDV-T1-GE3
DISTI # 26942294
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
55
  • 24:$0.7621
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 12000
  • 150000:$0.1473
  • 75000:$0.1512
  • 30000:$0.1554
  • 15000:$0.1668
  • 9000:$0.1922
  • 6000:$0.2315
  • 3000:$0.2835
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1549
  • 18000:€0.1659
  • 12000:€0.1799
  • 6000:€0.2089
  • 3000:€0.3069
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3459BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2689
  • 18000:$0.2759
  • 12000:$0.2839
  • 6000:$0.2959
  • 3000:$0.3049
SI3459BDV-T1-GE3
DISTI # 15R4948
Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 84R8040
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:2W RoHS Compliant: Yes0
  • 1000:$0.3390
  • 500:$0.4240
  • 250:$0.4690
  • 100:$0.5140
  • 50:$0.5950
  • 25:$0.6770
  • 1:$0.8380
SI3459BDV-T1-GE3.
DISTI # 96AC3676
Vishay IntertechnologiesP-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO3000
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 70026448
Vishay SiliconixMOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 0.180ohms,Id -2.2A,TSOP-6,Pd 2W
RoHS: Compliant
0
  • 3000:$0.3370
SI3459BDV-T1-GE3Vishay IntertechnologiesSI3457BDV Series 30 V 0.216 Ohm 12 nC P-Channel Surface Mount Mosfet - TSOP-6
RoHS: Compliant
3000Reel
  • 3000:$0.2600
SI3459BDV-T1-GE3
DISTI # 781-SI3459BDV-GE3
Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
RoHS: Compliant
15221
  • 1:$0.8300
  • 10:$0.6700
  • 100:$0.5090
  • 500:$0.4200
  • 1000:$0.3360
  • 3000:$0.3050
SI3459BDV-T1-GE3Vishay Intertechnologies 1602
    SI3459BDV-T1-GE3
    DISTI # 2679686
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP0
    • 9000:£0.2110
    • 3000:£0.2150
    SI3459BDV-T1-GE3Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
    RoHS: Compliant
    Americas - 3000
    • 3000:$0.2910
    • 6000:$0.2790
    • 12000:$0.2730
    • 18000:$0.2640
    SI3459BDV-T1-GE3
    DISTI # 2646376
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant
    0
    • 1000:$0.4500
    • 500:$0.5620
    • 100:$0.7110
    • 10:$0.9270
    • 1:$1.0500
    SI3459BDV-T1-GE3
    DISTI # 2679686
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant
    0
    • 3000:$0.4160
    SI3459BDV-T1-GE3
    DISTI # XSFP00000077613
    Vishay Siliconix 
    RoHS: Compliant
    6000 in Stock0 on Order
    • 6000:$0.3467
    • 3000:$0.3714
    画像 モデル 説明
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3

    MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3

    MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E

    Mfr.#: SI3459BDV-T1-E

    OMO.#: OMO-SI3459BDV-T1-E-1190

    ブランドニューオリジナル
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3-VISHAY

    MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3-VISHAY

    MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDVT1E3

    Mfr.#: SI3459BDVT1E3

    OMO.#: OMO-SI3459BDVT1E3-1190

    Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    SI3459BDY-T1-E3

    Mfr.#: SI3459BDY-T1-E3

    OMO.#: OMO-SI3459BDY-T1-E3-1190

    ブランドニューオリジナル
    SI3459BDV-T1-GE3-CUT TAPE

    Mfr.#: SI3459BDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3459BDV-T1-GE3-CUT-TAPE-1190

    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    3000
    数量を入力してください:
    SI3459BDV-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.36
    $0.36
    10
    $0.34
    $3.44
    100
    $0.33
    $32.55
    500
    $0.31
    $153.70
    1000
    $0.29
    $289.30
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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