STGWA80H65DFB

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

650 V

Collector-Emitter Saturation Voltage:

2 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

120 A

Pd - Power Dissipation:

469 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Series:

STGWA80H65DFB

Continuous Collector Current Ic Max:

80 A

Height:

5.3 mm

Length:

20.3 mm

Operating Temperature Range:

- 55 C to + 175 C

Width:

15.9 mm

Brand:

STMicroelectronics

Continuous Collector Current:

120 A

Gate-Emitter Leakage Current:

250 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

600

Subcategory:

IGBTs

Unit Weight:

1.340411 oz

Tags

STGWA8, STGWA, STGW, STG