IPD082N10N3GBTMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

7 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

55 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

45 S

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

42 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

31 ns

Typical Turn-On Delay Time:

18 ns

Part # Aliases:

G IPD082N10N3 IPD082N10N3GXT SP000485986

Unit Weight:

0.139332 oz

Tags

IPD082N10N3G, IPD082, IPD08, IPD0, IPD