 | |  | |
| PartNumber | IPD082N10N3GATMA1 | IPD082N10N3GBTMA1 | IPD088N04LGBTMA1 |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | MOSFET N-CH 40V 50A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 8.2 mOhms | 7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 42 nC | 55 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 45 S | 45 S | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 42 ns | 42 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns | 31 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | G IPD082N10N3 SP001127824 | G IPD082N10N3 IPD082N10N3GXT SP000485986 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Tradename | - | OptiMOS | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD088N06N3 G | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | |
| IPD082N10N3GATMA1 | MOSFET MV POWER MOS | ||
| IPD082N10N3GATMA1 | MOSFET N-CH 100V 80A TO252-3 | ||
| IPD088N06N3GBTMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
| IPD082N10N3GBTMA1 | MOSFET N-CH 100V 80A TO252-3 | ||
| IPD088N04LGBTMA1 | MOSFET N-CH 40V 50A TO252-3 | ||
Infineon Technologies |
IPD082N10N3GBTMA1 | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | |
| IPD082N10N3 | New and Original | ||
| IPD082N10N3G | 100V,80A,N Channel Power MOSFET | ||
| IPD088N04L | New and Original | ||
| IPD088N04L G | MOSFET N-Ch 40V 50A DPAK-2 | ||
| IPD088N04LG | New and Original | ||
| IPD088N06N3 | New and Original | ||
| IPD088N06N3 G | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 | ||
| IPD088N06N3G | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: IPD088N06N3 G) | ||
| IPD082N10N3 G | IGBT Transistors MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 |