IPD082 stock, IPD082, IPD082N10N3GATMA1


PartNumber	IPD082N10N3GATMA1	IPD082N10N3GBTMA1
Description	MOSFET MV POWER MOS	MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	PG-TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	80 A	80 A
Rds On Drain Source Resistance	8.2 mOhms	7 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	10 V	20 V
Qg Gate Charge	42 nC	55 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	125 W	125 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Transistor Type	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	45 S	45 S
Fall Time	8 ns	8 ns
Product Type	MOSFET	MOSFET
Rise Time	42 ns	42 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	31 ns	31 ns
Typical Turn On Delay Time	18 ns	18 ns
Part # Aliases	G IPD082N10N3 SP001127824	G IPD082N10N3 IPD082N10N3GXT SP000485986
Unit Weight	0.139332 oz	0.139332 oz
Tradename	-	OptiMOS

Search Part Number : "IPD082", Match & Start with "IPD082" - Total : 7

Manufacturer	Part #	Description
Infineon Technologies	IPD082N10N3GATMA1	MOSFET MV POWER MOS
	IPD082N10N3GATMA1	MOSFET N-CH 100V 80A TO252-3
	IPD082N10N3GBTMA1	MOSFET N-CH 100V 80A TO252-3
Infineon Technologies	IPD082N10N3GBTMA1	MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3
	IPD082N10N3	New and Original
	IPD082N10N3G	100V,80A,N Channel Power MOSFET
	IPD082N10N3 G	IGBT Transistors MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3

IPD082