 | | | |
| PartNumber | BSC046N02KS G | BSC046N10NS3 G | BSC046N02KSGAUMA1 |
| Description | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | MOSFET N-Ch 100V 100A TDSON-8 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 100 V | - |
| Id Continuous Drain Current | 19 A | 100 A | - |
| Rds On Drain Source Resistance | 4.6 mOhms | 4 mOhms | - |
| Vgs Gate Source Voltage | 12 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.8 W | 156 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 2 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 11 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 117 ns | 14 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 41 ns | - |
| Typical Turn On Delay Time | 15 ns | 16 ns | - |
| Part # Aliases | BSC046N02KSGAUMA1 BSC46N2KSGXT SP000379666 | BSC046N10NS3GATMA1 BSC46N1NS3GXT SP000907922 | BSC046N02KS BSC46N2KSGXT G SP000379666 |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 63 nC | - |
| Forward Transconductance Min | - | 48 S | - |
| Unit Weight | - | 0.003527 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | |
| BSC046N10NS3 G | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC046N02KSGAUMA1 | MOSFET N-CH 20V 80A TDSON-8 | ||
| BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
Infineon Technologies |
BSC046N02KSGAUMA1 | MOSFET LV POWER MOS | |
| BSC046N02KS | New and Original | ||
| BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
| BSC046N02KSG | 19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC046N10NS | New and Original | ||
| BSC046N10NS3 G | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) | ||
| BSC046N10NS3G | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |