DMG1013UW stock, DMG1013UW, DMG1013UWQ-7


PartNumber	DMG1013UWQ-7	DMG1013UW-7
Description	MOSFET MOSFET BVDSS:	MOSFET P-Ch -20V VDSS Enchanced Mosfet
Manufacturer	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SOT-323-3	SOT-323-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	20 V	20 V
Id Continuous Drain Current	820 mA	820 mA
Rds On Drain Source Resistance	1.5 Ohms	750 mOhms
Vgs th Gate Source Threshold Voltage	1 V	500 mV
Vgs Gate Source Voltage	6 V	4.5 V
Qg Gate Charge	622.4 pC	622.4 pC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	310 mW	0.31 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Qualification	AEC-Q101	-
Packaging	Reel	Reel
Transistor Type	1 P-Channel	1 P-Channel
Brand	Diodes Incorporated	Diodes Incorporated
Forward Transconductance Min	0.9 S	-
Fall Time	20.7 ns	20.7 ns
Product Type	MOSFET	MOSFET
Rise Time	8.1 ns	8.1 ns
Factory Pack Quantity	3000	3000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	28.4 ns	28.4 ns
Typical Turn On Delay Time	5.1 ns	5.1 ns
Unit Weight	0.000176 oz	0.000176 oz
Product	-	MOSFET Small Signal
Series	-	DMG1013

Search Part Number : "DMG1013UW", Match & Start with "DMG1013UW" - Total : 8

Manufacturer	Part #	Description
Diodes Incorporated	DMG1013UWQ-7	MOSFET MOSFET BVDSS:
	DMG1013UW-7	MOSFET P-Ch -20V VDSS Enchanced Mosfet
	DMG1013UWQ-7	Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R
	DMG1013UW-7	IGBT Transistors MOSFET P-Ch -20V VDSS Enchanced Mosfet
	DMG1013UW	New and Original
	DMG1013UW-7-F	New and Original
	DMG1013UW-7-F MP	New and Original
	DMG1013UW-7-CUT TAPE	New and Original

DMG1013UW