| PartNumber | DMN2028USS-13 | DMN2029USD-13 | DMN2028UVT-7 |
| Description | MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A | MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | TSOT-26-6 |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 9.8 A | 5.8 A | 6.2 A |
| Rds On Drain Source Resistance | 20 mOhms | 25 mOhms, 25 mOhms | 20 mOhms |
| Vgs Gate Source Voltage | 12 V | 8 V | 8 V |
| Qg Gate Charge | 11.6 nC | 10.4 nC | 8.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.56 W | 1.2 W | 1.2 W |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN2028 | DMN2029 | DMN2028 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
| Type | N-Channel Enhancement Mode MOSFET | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 16 S | 10 S | - |
| Fall Time | 12.33 ns | 53.5 ns | 22 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12.49 ns | 10.4 ns | 12.6 ns |
| Factory Pack Quantity | 2500 | 2500 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35.89 ns | 119.3 ns | 65 ns |
| Typical Turn On Delay Time | 11.67 ns | 16.5 ns | 13.2 ns |
| Unit Weight | 0.002610 oz | 0.002610 oz | 0.000459 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | 400 mV |