DMN26D0UT

DMN26D0UT vs DMN26D0UT-7-CUT TAPE vs DMN26D0UT-7

 
PartNumberDMN26D0UTDMN26D0UT-7-CUT TAPEDMN26D0UT-7
DescriptionDarlington Transistors MOSFET N-Ch -20V VDSS 230mA 300mW
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryFETs - Single-FETs - Single
SeriesDMN26-DMN26
PackagingDigi-ReelR Alternate Packaging-Digi-ReelR Alternate Packaging
Unit Weight0.000071 oz-0.000071 oz
Mounting StyleSMD/SMT-SMD/SMT
Package CaseSOT-523-SOT-523
TechnologySi-Si
Operating Temperature-55°C ~ 150°C (TJ)--55°C ~ 150°C (TJ)
Mounting TypeSurface Mount-Surface Mount
Number of Channels1 Channel-1 Channel
Supplier Device PackageSOT-523-SOT-523
ConfigurationSingle-Single
FET TypeMOSFET N-Channel, Metal Oxide-MOSFET N-Channel, Metal Oxide
Power Max300mW-300mW
Transistor Type1 N-Channel-1 N-Channel
Drain to Source Voltage Vdss20V-20V
Input Capacitance Ciss Vds14.1pF @ 15V-14.1pF @ 15V
FET FeatureStandard-Standard
Current Continuous Drain Id 25°C230mA (Ta)-230mA (Ta)
Rds On Max Id Vgs3 Ohm @ 100mA, 4.5V-3 Ohm @ 100mA, 4.5V
Vgs th Max Id1V @ 250μA-1V @ 250μA
Gate Charge Qg Vgs---
Pd Power Dissipation300 mW-300 mW
Maximum Operating Temperature+ 150 C-+ 150 C
Minimum Operating Temperature- 55 C-- 55 C
Fall Time15.2 ns-15.2 ns
Rise Time7.9 ns-7.9 ns
Vgs Gate Source Voltage10 V-10 V
Id Continuous Drain Current230 mA-230 mA
Vds Drain Source Breakdown Voltage20 V-20 V
Rds On Drain Source Resistance3 Ohms-3 Ohms
Transistor PolarityN-Channel-N-Channel
Typical Turn Off Delay Time13.4 ns-13.4 ns
Typical Turn On Delay Time3.8 ns-3.8 ns
Channel ModeEnhancement-Enhancement
Manufacturer Part # Description RFQ
DMN26D0UT New and Original
DMN26D0UT-7-F New and Original
DMN26D0UT-7-CUT TAPE New and Original
DMN26D0UT-7 Darlington Transistors MOSFET N-Ch -20V VDSS 230mA 300mW
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