EMZ1D

EMZ1DXV6T1G vs EMZ1DXV6T5 vs EMZ1DXV6T1

 
PartNumberEMZ1DXV6T1GEMZ1DXV6T5EMZ1DXV6T1
DescriptionBipolar Transistors - BJT 100mA 50V Dual ComplementaryBipolar Transistors - BJT 100mA 50V DualTRANS NPN/PNP 60V 0.1A SOT563
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-6-
Transistor PolarityPNPPNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 60 V- 60 V-
Collector Base Voltage VCBO- 50 V- 50 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT140 MHz140 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height0.55 mm0.55 mm-
Length1.6 mm1.6 mm-
PackagingReelReel-
Width1.2 mm1.2 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.1 A- 0.1 A-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation357 mW357 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity4000--
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz0.000106 oz-
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
EMZ1DXV6T1G Bipolar Transistors - BJT 100mA 50V Dual Complementary
EMZ1DXV6T5G Bipolar Transistors - BJT 100mA 50V Dual Complementary
EMZ1DXV6T5 Bipolar Transistors - BJT 100mA 50V Dual
EMZ1DXV6T1 TRANS NPN/PNP 60V 0.1A SOT563
EMZ1DXV6T1G TRANS NPN/PNP 60V 0.1A SOT563
EMZ1DXV6T5 TRANS NPN/PNP 60V 0.1A SOT563
EMZ1DXV6T5G TRANS NPN/PNP 60V 0.1A SOT563
EMZ1DXV6T1/3ZX New and Original
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