EMZ1DXV6T1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-563-6

Transistor Polarity:

PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

- 60 V

Collector- Base Voltage VCBO:

- 50 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

- 0.5 V

Maximum DC Collector Current:

0.1 A

Gain Bandwidth Product fT:

140 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

0.55 mm

Length:

1.6 mm

Packaging:

Reel

Width:

1.2 mm

Brand:

ON Semiconductor

Continuous Collector Current:

- 0.1 A

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

357 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

4000

Subcategory:

Transistors

Unit Weight:

0.000106 oz

Tags

EMZ1DXV6T1, EMZ1D, EMZ1, EMZ