 |  |  | |
| PartNumber | EMZ1DXV6T1G | EMZ1DXV6T1 | EMZ1DXV6T1/3ZX |
| Description | Bipolar Transistors - BJT 100mA 50V Dual Complementary | TRANS NPN/PNP 60V 0.1A SOT563 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | - 0.5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 140 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 357 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
EMZ1DXV6T1G | Bipolar Transistors - BJT 100mA 50V Dual Complementary | |
| EMZ1DXV6T1 | TRANS NPN/PNP 60V 0.1A SOT563 | ||
| EMZ1DXV6T1G | TRANS NPN/PNP 60V 0.1A SOT563 | ||
| EMZ1DXV6T1/3ZX | New and Original |