| PartNumber | FDN5630 | FDN5632N-F085 |
| Description | MOSFET SSOT-3 N-CH 60V | MOSFET Trans MOS N-Ch 60V 1.7A |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SSOT-3 | SSOT-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 1.7 A | 1.6 A |
| Rds On Drain Source Resistance | 73 mOhms | 98 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 1.1 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | PowerTrench | UltraFET |
| Packaging | Reel | Reel |
| Height | 1.12 mm | 1.12 mm |
| Length | 2.9 mm | 2.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal |
| Series | FDN5630 | FDN5632N_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | Power Trench MOSFET |
| Width | 1.4 mm | 1.4 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 6 S | - |
| Fall Time | 6 ns | 1.3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6 ns | 1.7 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 5.2 ns |
| Typical Turn On Delay Time | 10 ns | 15 ns |
| Part # Aliases | FDN5630_NL | FDN5632N_F085 |
| Unit Weight | 0.001058 oz | 0.001058 oz |
| Qualification | - | AEC-Q101 |