FGA50N100BNTD stock, FGA50N100BNTD, FGA50N100BNTDTU


PartNumber	FGA50N100BNTDTU	FGA50N100BNTD2
Description	IGBT Transistors 600V 4 0A UFD	IGBT Transistors N-ch / 50A 1000V
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-3P-3	TO-3PN
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1000 V	1000 V
Collector Emitter Saturation Voltage	2.5 V	1.5 V
Maximum Gate Emitter Voltage	25 V	25 V
Pd Power Dissipation	156 W	156 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	FGA50N100BNTD	FGA50N100BNTD2
Packaging	Tube	Tube
Continuous Collector Current Ic Max	50 A	-
Height	18.9 mm	-
Length	15.8 mm	-
Width	5 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	50 A	-
Gate Emitter Leakage Current	+/- 500 nA	500 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	450	450
Subcategory	IGBTs	IGBTs
Unit Weight	0.225789 oz	0.225789 oz
Continuous Collector Current at 25 C	-	50 A

Search Part Number : "FGA50N100BNTD", Match & Start with "FGA50N100BNTD" - Total : 7

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	FGA50N100BNTDTU	IGBT Transistors 600V 4 0A UFD
ON Semiconductor / Fairchild	FGA50N100BNTD2	IGBT Transistors N-ch / 50A 1000V
ON Semiconductor	FGA50N100BNTD2	IGBT Transistors N-ch / 50A 1000V
ON Semiconductor	FGA50N100BNTDTU	IGBT Transistors 600V 4 0A UFD
	FGA50N100BNTD	New and Original
	FGA50N100BNTD2,FGA50N100	New and Original
	FGA50N100BNTDTU(SBXD001)	New and Original

FGA50N100BNTD