 | | |
| PartNumber | IGT60R070D1ATMA1 | IGT60R190D1SATMA1 |
| Description | MOSFET 600V CoolGaN Power Transistor | MOSFET 600V CoolGaN Power Transistor |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | GaN | GaN |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-HSOF-8 | PG-HSOF-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 31 A | 12.5 A |
| Rds On Drain Source Resistance | 70 mOhms | 190 mOhms |
| Vgs th Gate Source Threshold Voltage | 0.9 V | 0.9 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 5.8 nC | 3.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 55.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolGaN | CoolGaN |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | 5 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 12 ns |
| Typical Turn On Delay Time | 12 ns | 11 ns |
| Part # Aliases | SP001300364 | SP001701702 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IGT60R070D1ATMA1 | MOSFET 600V CoolGaN Power Transistor | |
| IGT60R190D1SATMA1 | MOSFET 600V CoolGaN Power Transistor | ||
| IGT60R070D1ATMA1 | IC GAN FET 600V 60A 8HSOF | ||
| IGT60R190D1SATMA1 | IC GAN FET 600V 23A 8HSOF | ||
| IGT60R190D1S | Coolgan 600V 12,5A 140mOhm HSOF | ||
| IGT637627-001 | New and Original | ||
| IGT6D10 | Insulated Gate Bipolar Transisto | ||
| IGT6D11 | - Bulk (Alt: IGT6D11) |