PartNumber | IPG20N04S4L08AATMA1 | IPG20N04S4L08ATMA1 |
Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel |
Configuration | Single | Dual |
Qualification | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel |
Height | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm |
Transistor Type | 1 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPG20N04S4L-08A SP001265576 | IPG20N04S4L-08 IPG2N4S4L8XT SP000705576 |
Vds Drain Source Breakdown Voltage | - | 40 V |
Id Continuous Drain Current | - | 20 A |
Rds On Drain Source Resistance | - | 7.2 mOhms, 7.2 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V |
Vgs Gate Source Voltage | - | 16 V |
Qg Gate Charge | - | 39 nC, 39 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 175 C |
Pd Power Dissipation | - | 54 W |
Channel Mode | - | Enhancement |
Tradename | - | OptiMOS |
Series | - | OptiMOS-T2 |
Fall Time | - | 20 ns, 20 ns |
Rise Time | - | 3 ns, 3 ns |
Typical Turn Off Delay Time | - | 40 ns, 40 ns |
Typical Turn On Delay Time | - | 7 ns, 7 ns |
Unit Weight | - | 0.003415 oz |