IPP1

IPP12CNE8N G vs IPP139N08N3 G vs IPP13N03LB G

 
PartNumberIPP12CNE8N GIPP139N08N3 GIPP13N03LB G
DescriptionMOSFET N-Ch 85V 67A TO220-3MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3MOSFET N-CH 30V 30A TO-220
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage85 V80 V-
Id Continuous Drain Current67 A45 A-
Rds On Drain Source Resistance12.9 mOhms13.6 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation125 W79 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time8 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time21 ns35 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns18 ns-
Typical Turn On Delay Time17 ns12 ns-
Part # AliasesIPP12CNE8NGXKIPP139N08N3GXKSA1 SP000680870-
Unit Weight0.211644 oz0.211644 oz-
Vgs th Gate Source Threshold Voltage-2.8 V-
Qg Gate Charge-19 nC-
Tradename-OptiMOS-
Forward Transconductance Min-48 S, 24 S-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP147N12N3 G MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
IPP16CN10NGHKSA1 MOSFET N-CH 100V TO-220
IPP12CNE8N G MOSFET N-CH 85V 67A TO-220
IPP13N03LB G MOSFET N-CH 30V 30A TO-220
IPP147N03L G MOSFET N-CH 30V 20A TO-220-3
IPP16CNE8N G MOSFET N-CH 85V 53A TO-220
IPP147N12N3GXKSA1 MOSFET N-CH 120V 56A TO220-3
IPP14N03LA MOSFET N-CH 25V 30A TO-220AB
IPP16CN10LGXKSA1 MOSFET N-CH 100V 54A TO220-3
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP139N08N3 G IGBT Transistors MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3
Infineon Technologies
Infineon Technologies
IPP147N12N3GXKSA1 MOSFET MV POWER MOS
IPP12CNE8N G MOSFET N-Ch 85V 67A TO220-3
IPP147N03L G MOSFET N-Ch 30V 20A TO220-3 OptiMOS 3
IPP139N08N3 G MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3
IPP16CN10NG Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP147N12N3GXK Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP147N12N3GXKSA1)
IPP12CNE8N New and Original
IPP12CNE8NG New and Original
IPP139N08N New and Original
IPP139N08N,139N08N,IPP13 New and Original
IPP139N08N3 New and Original
IPP139N08N3 G-S New and Original
IPP139N08N3G Trans MOSFET N-CH 80V 45A 3-Pin TO-220 Tube - Bulk (Alt: IPP139N08N3G)
IPP139N08N3GXKSA1 - Bulk (Alt: IPP139N08N3GXKSA1)
IPP13N03LBG New and Original
IPP147N03LG Power Field-Effect Transistor, 20AI(D),30V,0.0217ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB
IPP147N03LG,147N03L New and Original
IPP147N03LGHKSA1 New and Original
IPP147N03LGS New and Original
IPP147N12N New and Original
IPP147N12N3G Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP147N12N3G(147N12) New and Original
IPP147N12N3G,147N12N New and Original
IPP15N03L New and Original
IPP16CN10L New and Original
IPP16CN10LG New and Original
IPP16CN10N New and Original
IPP16CN10NG HF New and Original
IPP16CN10NG(16CN10N) New and Original
IPP16CN10NG,16CN10N New and Original
IPP16CN10NG,IPP16CN10N,1 New and Original
IPP16CN10NGHKSA1 , 2SD87 New and Original
IPP16CN10NGXKSA1 , 2SD88 New and Original
IPP16CNE8N New and Original
IPP147N12N3 G Darlington Transistors MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
IPP139N08N3GHKSA1 MOSFET N-Ch 80V 45A TO220-3
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