IPP114N12N3

IPP114N12N3 G vs IPP114N12N3 vs IPP114N12N3 G(SP00065274

 
PartNumberIPP114N12N3 GIPP114N12N3IPP114N12N3 G(SP00065274
DescriptionMOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance11.4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge49 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm--
BrandInfineon Technologies--
Fall Time7 nS7 ns-
Product TypeMOSFET--
Rise Time36 nS36 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 nS30 nS-
Part # AliasesIPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740-
Package Case-TO-220-3-
Pd Power Dissipation-136 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-75 A-
Vds Drain Source Breakdown Voltage-120 V-
Rds On Drain Source Resistance-11.4 mOhms-
Qg Gate Charge-49 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP114N12N3 G MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
IPP114N12N3GXKSA1 MOSFET N-CH 120V 75A TO220-3
IPP114N12N3 New and Original
IPP114N12N3 G(SP00065274 New and Original
IPP114N12N3-114N12N New and Original
IPP114N12N3G Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP114N12N3G,114N12N New and Original
IPP114N12N3 G Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
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