| PartNumber | IXFN52N100X | IXFN520N075T2 | IXFN52N90P |
| Description | MOSFET 1000V 44A SOT-227 Power MOSFET | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1000 V | 75 V | 900 V |
| Id Continuous Drain Current | 44 A | 480 A | 43 A |
| Rds On Drain Source Resistance | 125 mOhms | 1.9 mOhms | 160 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 10 V | 30 V |
| Qg Gate Charge | 245 nC | 545 nC | 132 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 830 W | 940 W | 890 W |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Series | X-Class | IXFN520N075 | IXFN52N90 |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 23 S | 65 S | 35 S / 20 S |
| Fall Time | 9 ns | 35 ns | 42 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 36 ns | 80 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 107 ns | 80 ns | 95 ns |
| Typical Turn On Delay Time | 34 ns | 48 ns | 63 ns |
| Type | - | TrenchT2 GigaMOS HiperFet | Polar Power MOSFET |
| Unit Weight | - | 1.058219 oz | 1.340411 oz |