 | | | |
| PartNumber | MRF6V2010NBR5 | MRF6V2010NBR1 | MRF6V2010NB |
| Description | RF MOSFET Transistors VHV6 10W Latrl N-Ch. Broadband MOSFET | RF MOSFET Transistors VHV6 10W TO272-2N | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | E | E | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 110 V | 110 V | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-272-3 | TO-272-3 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 2.64 mm | 2.64 mm | - |
| Length | 23.67 mm | 23.67 mm | - |
| Series | MRF6V2010N | MRF6V2010N | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 6.4 mm | 6.4 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 5 V, 10 V | - 5 V, 10 V | - |
| Unit Weight | 0.042191 oz | 0.042191 oz | - |
| Part # Aliases | - | 935319274528 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF6V2010NR1 | RF MOSFET Transistors VHV6 10W TO270-2N | |
| MRF6V2010NBR5 | RF MOSFET Transistors VHV6 10W Latrl N-Ch. Broadband MOSFET | ||
| MRF6V2010NBR1 | RF MOSFET Transistors VHV6 10W TO272-2N | ||
| MRF6V2010NB | New and Original | ||
NXP Semiconductors |
MRF6V2010NBR1 | FET RF 110V 220MHZ TO272-2 | |
| MRF6V2010NBR5 | FET RF 110V 220MHZ TO-272-2 | ||
| MRF6V2010NR1 | RF MOSFET Transistors VHV6 10W TO270-2N |