 | |  | |
| PartNumber | NJV4030PT1G | NJV4030PT3G | NJV4030PT1GONSEMI |
| Description | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SOT-223-4 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
| Collector Base Voltage VCBO | 40 V | 40 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 150 mV | - |
| Maximum DC Collector Current | 5 A | 5 A | - |
| Gain Bandwidth Product fT | 160 MHz | 160 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NJT4030P | NJT4030P | - |
| DC Current Gain hFE Max | 400 at 1 A, 1 V | 400 at 1 A, 1 VDC | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 200 at 1 A, 1 V | 200 at 1 A, 1 VDC | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.003951 oz | - | - |
| Continuous Collector Current | - | 3 A | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NJV4030PT1G | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | ||
| NJV4030PT3G | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | ||
| NJV4030PT1GONSEMI | New and Original | ||
ON Semiconductor |
NJV4030PT3G | TRANS PNP 40V 3A SOT223 | |
| NJV4030PT1G | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN |