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| PartNumber | NTHD3100CT1G | NTHD3100CT1 | NTHD3100CT1G (C9) |
| Description | MOSFET 20V +3.9A/-4.4A Complementary | MOSFET N/P-CH 20V CHIPFET | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.9 A, 3.2 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms, 110 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV, 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V, - 2.5 V | - | - |
| Qg Gate Charge | 2.3 nC, 7.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTHD3100C | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 6 S, 8 S | - | - |
| Fall Time | 1.5 ns, 12.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.7 ns, 11.7 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.6 ns, 16 ns | - | - |
| Typical Turn On Delay Time | 6.3 ns, 5.8 ns | - | - |
| Unit Weight | 0.002998 oz | - | - |