NTHD3100CT

NTHD3100CT1G vs NTHD3100CT1 vs NTHD3100CT1G (C9)

 
PartNumberNTHD3100CT1GNTHD3100CT1NTHD3100CT1G (C9)
DescriptionMOSFET 20V +3.9A/-4.4A ComplementaryMOSFET N/P-CH 20V CHIPFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.9 A, 3.2 A--
Rds On Drain Source Resistance80 mOhms, 110 mOhms--
Vgs th Gate Source Threshold Voltage600 mV, 450 mV--
Vgs Gate Source Voltage4.5 V, - 2.5 V--
Qg Gate Charge2.3 nC, 7.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD3100C--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min6 S, 8 S--
Fall Time1.5 ns, 12.4 ns--
Product TypeMOSFET--
Rise Time10.7 ns, 11.7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.6 ns, 16 ns--
Typical Turn On Delay Time6.3 ns, 5.8 ns--
Unit Weight0.002998 oz--
Manufacturer Part # Description RFQ
NTHD3100CT1G MOSFET 20V +3.9A/-4.4A Complementary
NTHD3100CT1G (C9) New and Original
NTHD3100CT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTHD3100CT3 MOSFET 20V +3.9A/-4.4A
NTHD3100CT3G MOSFET 20V +3.9A/-4.4A Complementary
NTHD3100CT1 MOSFET N/P-CH 20V CHIPFET
NTHD3100CT1G MOSFET N/P-CH 20V CHIPFET
NTHD3100CT3 MOSFET N/P-CH 20V CHIPFET
NTHD3100CT3G MOSFET N/P-CH 20V CHIPFET
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