 |  | | |
| PartNumber | NTJD1155LT1G | NTJD1155LT1(G) | NTJD1155LT1G , FLZ6V8B |
| Description | MOSFET 8V +/-1.3A P-Channel w/Level Shift | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-88-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 175 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 400 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTJD1155L | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.001093 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTJD1155LT1G | MOSFET 8V +/-1.3A P-Channel w/Level Shift | ||
| NTJD1155LT1(G) | New and Original | ||
| NTJD1155LT1G , FLZ6V8B | New and Original | ||
| NTJD1155NT1G | New and Original | ||
| NTJD1155LT1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTJD1155LT1G | MOSFET N/P-CH 8V 1.3A SOT-363 | |
| NTJD1155LT1 | MOSFET N/P-CH 8V 1.3A SOT-363 |