SI2

SI2307BDS-T1-E3 vs SI2307CDS-T1-GE3 vs SI2307CDS-T1-E3

 
PartNumberSI2307BDS-T1-E3SI2307CDS-T1-GE3SI2307CDS-T1-E3
DescriptionMOSFET 30V 3.2A 1.25WMOSFET -30V Vds 20V Vgs SOT-23MOSFET -30V Vds 20V Vgs SOT-23
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current2.5 A3.5 A3.5 A
Rds On Drain Source Resistance78 mOhms88 mOhms88 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge9 nC4.1 nC4.1 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation0.75 W1.8 W1.8 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.45 mm1.45 mm-
Length2.9 mm2.9 mm-
SeriesSI2SI2SI2
Transistor Type1 P-Channel1 P-Channel1 P-Channel
Width1.6 mm1.6 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min5 S7 S7 S
Fall Time14 ns7.7 ns7.7 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns13 ns13 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns17 ns17 ns
Typical Turn On Delay Time9 ns5.5 ns5.5 ns
Part # AliasesSI2307BDS-E3SI2307CDS-GE3SI2307CDS-E3
Unit Weight0.000282 oz0.000282 oz0.000282 oz
  • Start with
  • SI2 1125
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2308CDS-T1-GE3 MOSFET 60V Vds 20V Vgs SOT-23
SI2308BDS-T1-GE3 MOSFET 60V Vds 20V Vgs SOT-23
SI2307BDS-T1-E3 MOSFET 30V 3.2A 1.25W
SI2307CDS-T1-GE3 MOSFET -30V Vds 20V Vgs SOT-23
SI2307CDS-T1-E3 MOSFET -30V Vds 20V Vgs SOT-23
SI2308BDS-T1-E3 MOSFET 60V Vds 20V Vgs SOT-23
SI2309CDS-T1-GE3 MOSFET -60V Vds 20V Vgs SOT-23
SI2309CDS-T1-E3 MOSFET -60V Vds 20V Vgs SOT-23
SI2308DS-T1-E3 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
Rectron
Rectron
SI2309DS MOSFET Plastic-Encapsulated MOSFET P-CH-60V
SI2309DS MOSFET Plastic-Encapsulated MOSFET P-CH-60V
Vishay
Vishay
SI2307BDS-T1-GE3 MOSFET P-CH 30V 2.5A SOT23-3
SI2307CDS-T1-E3 MOSFET P-CH 30V 3.5A SOT23-3
SI2307CDS-T1-GE3 MOSFET P-CH 30V 3.5A SOT23-3
SI2308BDS-T1-E3 MOSFET N-CH 60V 2.3A SOT23-3
SI2308BDS-T1-GE3 MOSFET N-CH 60V 2.3A SOT23-3
SI2308DS-T1-E3 MOSFET N-CH 60V 2A SOT23-3
SI2309CDS-T1-E3 MOSFET P-CH 60V 1.6A SOT23-3
SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3
SI2308CDS-T1-GE3 MOSFET N-CH 60V 2.6A SOT23-3
SI2307BDS-T1-E3 Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
SI2307CDS New and Original
SI2307CDS-T1 New and Original
SI2307DS MOSFET Transistor, P-Channel, TO-236AB
SI2307DS-T1-GE3 New and Original
SI2308 New and Original
SI2308BDS New and Original
SI2308BDS-T1-GE3 , MAX64 New and Original
SI2308DS New and Original
SI2308DS-T1-E3/B02 New and Original
SI2308DS-T1-ES , MAX6425 New and Original
SI2308DS-T1-GE3 N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
SI2309 New and Original
SI2309ADS-T1-GE3 New and Original
SI2309BDS-T1-E3 New and Original
SI2309CDS New and Original
SI2309CDS SOT23-3 New and Original
SI2309CDS-TI-GE3 New and Original
SI2309DS , M1MA151KT2 New and Original
SI2309DS-T1 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
SI2307BDS-T1-E3-CUT TAPE New and Original
SI2307CDS-T1-GE3-CUT TAPE New and Original
SI2308BDS-T1-E3-CUT TAPE New and Original
SI2308BDS-T1-GE3-CUT TAPE New and Original
SI2309CDS-T1-E3-CUT TAPE New and Original
SI2309CDS-T1-GE3-CUT TAPE New and Original
SI2307DS-T1 MOSFET RECOMMENDED ALT 781-SI2307BDS-E3
SI2307DS-T1-E3 MOSFET 30V 3.0A 1.25W
SI2307DS-TI New and Original
SI2308DS-T1 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
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