 | | | |
| PartNumber | SI2315BDS-T1-E3 | SI2314EDS-T1-E3 | SI2314EDS-T1-GE3 |
| Description | MOSFET 1.8V 3.2A 1.25W | MOSFET N-CHANNEL 20-V (D-S) MOSFET | MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 50 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SI2315BDS-E3 | SI2314EDS-E3 | SI2314EDS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2318DS-T1-E3 | MOSFET 40V 6A | |
| SI2316BDS-T1-GE3 | MOSFET 30V 4.5A 1.66W 50mohm @ 10V | ||
| SI2315BDS-T1-E3 | MOSFET 1.8V 3.2A 1.25W | ||
| SI2316DS-T1-E3 | MOSFET 30V 3.4A 0.96W 50mohm @ 10V | ||
| SI2318CDS-T1-GE3 | MOSFET 40V Vds 20V Vgs SOT-23 | ||
| SI2314EDS-T1-E3 | MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
| SI2315BDS-T1-GE3 | MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V | ||
| SI2318DS-T1-GE3 | MOSFET 40V 3.9A 1.25W 45mohm @ 10V | ||
| SI2316DS-T1-GE3 | MOSFET 30V 3.4A 0.96W 50mohm @ 10V | ||
| SI2314EDS-T1-GE3 | MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V | ||
| SI2316BDS-T1-E3 | MOSFET 30V 4.5A 1.66W | ||
| SI2314DS | New and Original | ||
| SI2314DS-T1-E3 | New and Original | ||
| SI2314EDS | New and Original | ||
| SI2315(ESD) | New and Original | ||
| SI2315BDST1 | Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| SI2315DS | 3.5 A, 12 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 | ||
| SI2315DS-T1 , MAX3243CUI | New and Original | ||
| SI2315DS-T1 , MAX3243CUI+T | New and Original | ||
| SI2315DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2315BDS-E3 | ||
| SI2315DS-T1-GE3 | New and Original | ||
| SI2315DS-T1/C5RAB | New and Original | ||
| SI2315DS-TI | New and Original | ||
| SI2316BDS | New and Original | ||
| SI2316DS-T1 | MOSFET RECOMMENDED ALT 781-SI2316BDS-E3 | ||
| SI2317 | New and Original | ||
| SI2318 | New and Original | ||
| SI2318BDS | New and Original | ||
| SI2318BDS-T1-E3 | New and Original | ||
| SI2318CD | New and Original | ||
| SI2318CDS | New and Original | ||
| SI2318CDS-T1 | New and Original | ||
| SI2318DS | New and Original | ||
| SI2315BDS-T1-E3-CUT TAPE | New and Original | ||
| SI2316BDS-T1-E3-CUT TAPE | New and Original | ||
| SI2316BDS-T1-GE3-CUT TAPE | New and Original | ||
| SI2316DS-T1-E3-CUT TAPE | New and Original | ||
| SI2318CDS-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI2314EDS-T1-E3 | MOSFET N-CH 20V 3.77A SOT23-3 | |
| SI2315BDS-T1-E3 | MOSFET P-CH 12V 3A SOT23-3 | ||
| SI2315BDS-T1-GE3 | MOSFET P-CH 12V 3A SOT23-3 | ||
| SI2316BDS-T1-E3 | MOSFET N-CH 30V 4.5A SOT-23 | ||
| SI2316BDS-T1-GE3 | MOSFET N-CH 30V 4.5A SOT23-3 | ||
| SI2316DS-T1-E3 | MOSFET N-CH 30V 2.9A SOT23-3 | ||
| SI2316DS-T1-GE3 | MOSFET N-CH 30V 2.9A SOT23-3 | ||
| SI2318CDS-T1-GE3 | MOSFET N-CH 40V 5.6A SOT-23 | ||
| SI2318DS-T1-E3 | MOSFET N-CH 40V 3A SOT23-3 | ||
| SI2314EDS-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V | ||
| SI2315 | New and Original | ||
| SI2315DS-T1 | MOSFET RECOMMENDED ALT 781-SI2315BDS-E3 |