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| PartNumber | SI9936BDY-T1-E3 | SI9936BDY-T1-GE3 | SI9936BDY-T1 |
| Description | MOSFET RECOMMENDED ALT 781-SI4936CDY-GE3 | IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V | |
| Manufacturer | Vishay | Vishay Siliconix | |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI9 | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI9936BDY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 1.1W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4.5A | - |
| Rds On Max Id Vgs | - | 35 mOhm @ 6A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 13nC @ 10V | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI9936BDY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4936CDY-GE3 | |
Vishay |
SI9936BDY-T1-GE3 | IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V | |
| SI9936BDY-T1-E3 | IGBT Transistors MOSFET 30V 6.0A 0.035Ohm | ||
| SI9936BDY-T1 | New and Original |