SIHB24

SIHB24N65EF-GE3 vs SIHB24N65E-GE3 vs SIHB24N65E-E3

 
PartNumberSIHB24N65EF-GE3SIHB24N65E-GE3SIHB24N65E-E3
DescriptionMOSFET 650V Vds 30V Vgs D2PAK (TO-263)MOSFET 650V Vds 30V Vgs D2PAK (TO-263)MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
PackagingTubeTubeTube
SeriesSIHEE
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Mounting Style-SMD/SMTSMD/SMT
Package / Case-TO-263-3TO-263-3
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-700 V700 V
Id Continuous Drain Current-24 A24 A
Rds On Drain Source Resistance-145 mOhms145 mOhms
Vgs th Gate Source Threshold Voltage-4 V4 V
Vgs Gate Source Voltage-30 V30 V
Qg Gate Charge-81 nC81 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-250 W250 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Fall Time-69 ns69 ns
Rise Time-84 ns84 ns
Typical Turn Off Delay Time-70 ns70 ns
Typical Turn On Delay Time-24 ns24 ns
Unit Weight-0.050717 oz0.050717 oz
Height--4.83 mm
Length--10.67 mm
Width--9.65 mm
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHB24N65EF-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65E-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65ET5-GE3 MOSFET N-Channel 650V
SIHB24N65E-E3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65ET1-GE3 MOSFET N-Channel 650V
SIHB24N65E ブランドニューオリジナル
SIHB24N65EGE3 ブランドニューオリジナル
Vishay
Vishay
SIHB24N65E-GE3 MOSFET N-CH 650V 24A D2PAK
SIHB24N65EF-GE3 MOSFET N-CH 650V 24A D2PAK
SIHB24N65ET1-GE3 MOSFET N-CH 650V 24A TO263
SIHB24N65E-E3 Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
SIHB24N65ET5-GE3 MOSFET N-CH 650V 24A TO263
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