SIHB2

SIHB20N50E-GE3 vs SIHB21N60EF-GE3 vs SIHB21N65EF-GE3

 
PartNumberSIHB20N50E-GE3SIHB21N60EF-GE3SIHB21N65EF-GE3
DescriptionMOSFET 500V Vds 30V Vgs D2PAK (TO-263)MOSFET 600V Vds 30V Vgs D2PAK (TO-263)MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3-TO-263-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage550 V--
Id Continuous Drain Current19 A--
Rds On Drain Source Resistance184 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge46 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation179 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulkReelTube
Height4.83 mm-4.83 mm
Length10.67 mm-10.67 mm
SeriesEEFEF
Width9.65 mm-9.65 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time25 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns--
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.050717 oz0.050717 oz0.079014 oz
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHB22N60EF-GE3 MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
SIHB22N60AEL-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60AE-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65EF-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65E-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB20N50E-GE3 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
SIHB23N60E-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60E-E3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB21N60EF-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB28N60EF-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60E-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB21N65EF-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60EL-GE3 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65ET5-GE3 MOSFET N-Channel 650V
SIHB22N65E-GE3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB24N65E-E3 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET5-GE3 MOSFET 600V Vds E Series D2PAK TO-263
SIHB24N65ET1-GE3 MOSFET N-Channel 650V
SIHB25N50E-GE3 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET1-GE3 MOSFET 600V Vds E Series D2PAK TO-263
SIHB22N60S-E3 IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
SIHB22N60E Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N60SE3 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N60SGE3 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N65E Trans MOSFET N-CH 650V 22A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N65E)
SIHB24N65E ブランドニューオリジナル
SIHB24N65EGE3 ブランドニューオリジナル
Vishay
Vishay
SIHB28N60EF-GE3 IGBT Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
SIHB20N50E-GE3 IGBT Transistors MOSFET N-Channel 500V
SIHB22N65E-GE3 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHB23N60E-GE3 MOSFET N-CH 600V 23A D2PAK
SIHB22N60E-E3 RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
SIHB22N60AEL-GE3 MOSFET N-CHAN 600V
SIHB25N50E-GE3 MOSFET N-CH 500V 26A TO263
SIHB21N60EF-GE3 MOSFET N-CH 600V 21A D2PAK TO263
SIHB21N65EF-GE3 MOSFET N-CH 650V 21A D2PAK
SIHB22N60AE-GE3 MOSFET N-CH 600V 20A D2PAK
SIHB22N60E-GE3 MOSFET N-CH 600V 21A D2PAK
SIHB22N60ET1-GE3 MOSFET N-CH 600V 21A TO263
SIHB22N60ET5-GE3 MOSFET N-CH 600V 21A TO263
SIHB22N60S-GE3 MOSFET N-CH 650V TO263
SIHB24N65E-GE3 MOSFET N-CH 650V 24A D2PAK
SIHB24N65EF-GE3 MOSFET N-CH 650V 24A D2PAK
SIHB24N65ET1-GE3 MOSFET N-CH 650V 24A TO263
SIHB22N60EL-GE3 MOSFET N-CH 600V 21A TO263
SIHB24N65E-E3 Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
SIHB24N65ET5-GE3 MOSFET N-CH 650V 24A TO263
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