 |  | | |
| PartNumber | SPB18P06P G | SPB18P06P 18P06P | SPB18P06PG |
| Description | MOSFET P-Ch -60V 18.6A D2PAK-2 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Manufacturer | Infineon | - | INF |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 18.7 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | - 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 81.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | SPB18P06 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.8 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP000102181 SPB18P06PGATMA1 SPB18P6PGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB18P06PGATMA1 | MOSFET P-Ch -60V 18.6A D2PAK-2 | |
| SPB18P06P G | MOSFET P-Ch -60V 18.6A D2PAK-2 | ||
| SPB18P06PGATMA1 | MOSFET P-CH 60V 18.7A TO-263 | ||
| SPB18P06PGATMA1-CUT TAPE | ブランドニューオリジナル | ||
| SPB18P06P 18P06P | ブランドニューオリジナル | ||
| SPB18P06P G | Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) TO-263 | ||
| SPB18P06PG | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SPB18P06PGS | ブランドニューオリジナル | ||
| SPB1H5S15 | ブランドニューオリジナル |