 | | | |
| PartNumber | SQ2362ES-T1_GE3 | SQ2361ES-T1_GE3 | SQ2361EES-T1-GE3 |
| Description | MOSFET N-Channel 60V AEC-Q101 Qualified | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ2361AEES-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 4.3 A | 2.8 A | - |
| Rds On Drain Source Resistance | 68 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 7.6 nC | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 3 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 10 S | 5 S | - |
| Fall Time | 18 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 22 ns | - |
| Typical Turn On Delay Time | 6 ns | 8 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Part # Aliases | - | - | SQ2361EES-GE3 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2364EES-T1_GE3 | MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id | |
| SQ2362ES-T1_GE3 | MOSFET N-Channel 60V AEC-Q101 Qualified | ||
| SQ2361ES-T1_GE3 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | ||
| SQ2361EES-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ2361AEES-T1_GE3 | ||
| SQ2361ES-T1_GE3-CUT TAPE | ブランドニューオリジナル | ||
| SQ2362ES-T1_GE3-CUT TAPE | ブランドニューオリジナル | ||
| SQ2360EES-T1-E3 | ブランドニューオリジナル | ||
| SQ2361/2309 | ブランドニューオリジナル | ||
| SQ2361AEES-T1-GE3 | MOSFET P-CHANNEL 60-V (D-S) | ||
| SQ2361EES | ブランドニューオリジナル | ||
| SQ2361EES-T1-E3 | ブランドニューオリジナル | ||
| SQ2361EES-T1_GE3 | ブランドニューオリジナル | ||
| SQ2361ES | ブランドニューオリジナル | ||
| SQ2361ES-T1-GE3 | MOSFET P-CHANNEL 60-V (D-S) | ||
| SQ2361ES-T1_GE3/V | ブランドニューオリジナル | ||
| SQ2362ES-T1-GE3 | MOSFET N-CHANNEL 60V | ||
| SQ2362ES-TI-GE3 | ブランドニューオリジナル | ||
Vishay |
SQ2361AEES-T1_GE3 | MOSFET P-CH 60V 2.5A SSOT23 | |
| SQ2360EES-T1-GE3 | MOSFET N-CH 60V 4.4A TO236 | ||
| SQ2361EES-T1-GE3 | MOSFET P-CH 60V 2.5A SOT23 | ||
| SQ2361ES-T1_GE3 | MOSFET P-CH 60V 2.5A SSOT23 | ||
| SQ2362ES-T1_GE3 | MOSFET N-CH 60V 4.4A TO236 |