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| PartNumber | SSM6J212FE | SSM6J212FE(PQ) | SSM6J212FE(TE85LF |
| Description | |||
| Manufacturer | Toshiba Semiconductor and Storage | - | - |
| Product Category | FETs - Single | - | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Package Case | SOT-563, SOT-666 | - | - |
| Operating Temperature | 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | ES6 | - | - |
| FET Type | MOSFET P-Channel, Metal Oxide | - | - |
| Power Max | 500mW | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 970pF @ 10V | - | - |
| FET Feature | Logic Level Gate, 1.5V Drive | - | - |
| Current Continuous Drain Id 25°C | 4A (Ta) | - | - |
| Rds On Max Id Vgs | 40.7 mOhm @ 3A, 4.5V | - | - |
| Vgs th Max Id | 1V @ 1mA | - | - |
| Gate Charge Qg Vgs | 14.1nC @ 4.5V | - | - |