SSM6J212

SSM6J212FE vs SSM6J212FE(PQ) vs SSM6J212FE(TE85LF

 
PartNumberSSM6J212FESSM6J212FE(PQ)SSM6J212FE(TE85LF
Description
ManufacturerToshiba Semiconductor and Storage--
Product CategoryFETs - Single--
Series---
PackagingDigi-ReelR Alternate Packaging--
Package CaseSOT-563, SOT-666--
Operating Temperature150°C (TJ)--
Mounting TypeSurface Mount--
Supplier Device PackageES6--
FET TypeMOSFET P-Channel, Metal Oxide--
Power Max500mW--
Drain to Source Voltage Vdss20V--
Input Capacitance Ciss Vds970pF @ 10V--
FET FeatureLogic Level Gate, 1.5V Drive--
Current Continuous Drain Id 25°C4A (Ta)--
Rds On Max Id Vgs40.7 mOhm @ 3A, 4.5V--
Vgs th Max Id1V @ 1mA--
Gate Charge Qg Vgs14.1nC @ 4.5V--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM6J212FE,LF MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
SSM6J212FE New and Original
SSM6J212FE(PQ) New and Original
SSM6J212FE(TE85LF New and Original
SSM6J212FE(TE85LF) New and Original
SSM6J212FELF MOSFET PCH MOSFET (LF) TRANSISTOR
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